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Influences of Defective Interphase and Contact Region Among Nanosheets on the Electrical Conductivity of Polymer Graphene Nanocomposites Publisher Pubmed



Zare Y1 ; Munir MT2 ; Rhee KY3
Authors
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Authors Affiliations
  1. 1. Biomaterials and Tissue Engineering Research Group, Department of Interdisciplinary Technologies, Motamed Cancer Institute, Breast Cancer Research Center, ACECR, Tehran, Iran
  2. 2. College of Engineering and Technology, American University of the Middle East, Egaila, 54200, Kuwait
  3. 3. Department of Mechanical Engineering (BK21 four), College of Engineering, Kyung Hee University, Yongin, South Korea

Source: Scientific Reports Published:2024


Abstract

In the current article, a defective interface is characterized by “Dc,” representing the smallest diameter of nanosheets crucial for effective conduction transfer from the conductive filler to the medium, and by “ψ” as interfacial conduction. These parameters define the effective aspect ratio and operational volume fraction of graphene in the samples. The resistances of the graphene and polymer layer in contact zones are also considered to determine the contact resistance between adjacent nanosheets. Subsequently, a model for the tunneling conductivity of composites is proposed based on these concepts. This innovative model is validated by experimental data. Additionally, the effects of various factors on the conductivity of the composites and contact resistance are analyzed. Certain parameters such as filler concentration, graphene conductivity, interfacial conduction, and “Dc” do not affect the contact resistance due to the superconductivity of the nanosheets. However, factors like thin and large nanosheets, short tunneling distance (d), high interfacial conduction (ψ), low “Dc,” and low tunnel resistivity (ρ) contribute to increased conductivity in nanocomposites. The maximum conductivity of 0.09 is obtained at d = 2 nm and ψ = 900 S/m, but d > 6 nm and ψ < 200 S/m produce an insulated sample. Additionally, the highest conductivity of 0.11 S/m is achieved with Dc = 100 nm and ρ = 100 Ω m, whereas the conductivity approaches 0 at Dc = 500 nm and ρ = 600 Ω m. © The Author(s) 2024.
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