Advances in Hba1c Biosensor Development Based on Field Effect Transistors: A Review Publisher



Ahmadi A¹ ; Kabiri S¹ ; Omidfar K¹ Show Affiliations
Source: IEEE Sensors Journal Published:2020

Abstract

Diabetes mellitus is a lifelong disease and the 7th leading cause of death worldwide. Hyperglycemia is the major hallmark of this disease that causes many clinical complications. Therefore, to maintain blood glucose levels within a normal range in diabetic patients, regular monitoring is of crucial importance. Glycated hemoglobin (HbA1c) is a glucose-linked hemoglobin in blood representing the average glucose level over the past three months with the least effect of interfering factors. Thus, HbA1c can be used as an appropriate biomarker for screening, pre-diagnosis, and management of diabetes. Current methods for HbA1c level determination have certain drawbacks such as being complex, time-consuming, expensive and they require trained personnel. To overcome these drawbacks, recently developed bio-sensing systems have become a promising technology for HbA1c detection. Different types of biosensors are developed for HbA1c recognition including electrochemical, colorimetric, electro-chemiluminescent, and field-effect transistor (FET). FETs are based on the semiconductor nanostructures and have great potentials for label-free, sensitive, specific, and rapid diagnosis of HbA1c as point of care (POC) diagnostic devices. To improve the sensitive and selective detection of HbA1c in FET-based biosensors, lots of researches have focused on developing new methods for the immobilization of bio-recognition elements and designing nano-materials with unique features. To promote understanding of the evolution of HbA1c bio-sensing technologies over the last decades; we presented an overview of trends from complementary metal-oxide-semiconductor (CMOS) to FET-based nano-biosensors, with special emphasis on standardization of HbA1c assays, HbA1c biosensor overview, FETs overview, FETs principles for HbA1c detection and HbA1c marketing. © 2001-2012 IEEE.